IGBT transistor: characteristics, principle of operation, application
An IGBT transistor is an insulated gate device. The scope of its application is very wide. Most often it can be found in electric drives, which are used both in everyday life and in industry. Additionally, these transistors are necessary for the operation of the power correctors. Uninterruptible power supplies that are used for personal computers, without them also can not work.
In some cases, transistors of this type, it is advisable to install on welding inverters. There they replace conventional field analogues. Ultimately, power supplies should be mentioned. In this case, they perform the role of a conductor there.
How does the transistor?
The different models are similar in structure, and the circuits on IGBT transistors are identical. The emitter is located in the central part of the device. Under it is the base, which has a certain thickness.The collector in the device is above the emitter. However, its transition can also be of various widths. Additionally, it should be noted that the collector has its own outlet.
Principle of operation of the device
The devices use different IGBT transistors. The principle of their operation is based on the oscillation of the limiting frequency. In this case, the bandwidth parameter also changes. Depending on the size of the base, the rated voltage of the system is different. When current is applied to the emitter, it changes its polarity.
Next, at its base, is the process of transformation. In this case, the transitions of the device are not involved. To increase the frequency limit, a collector is connected to the circuit. Through its transitions, the current enters the base. The last transformation phase occurs at the output through the conductors. IGBT transistors drivers are selected based on the model series.
What are the basic parameters he has?
The main parameter of the transistor is considered to be the limiting frequency. This indicator is measured in Hz. The thickness of the base of the device affects its value. Additionally, the threshold voltage of the device should be considered.In turn, tracking accuracy depends on the capacity of the collector. Transitions in this case are carried out through the base. For an emitter, the signal speed is considered to be the main parameter. This indicator is measured in ms.
IRG4BC10K Series Transistors
These IGBT transistors have good characteristics and they differ in a fairly strong case. In this case, the base is set with a thickness of exactly 1.1 mm. Due to this, the bandwidth of the device is quite good. Additionally, it should be noted the high conductivity of the emitter. These devices are not capable of working with beam capacitors.
In turn, for modulators, these transistors are well suited. The accuracy of the tracking device will ultimately depend on many parameters. First of all, it is important to consider the threshold voltage at the input. If it exceeds 20 V, then before the transistor, many experts advise installing a binary bus. Thus, the negative resistance in the circuit can be significantly reduced.
Transitions of the emitter in the device, it is possible to adjust through changes in inductance.If we consider conventional converters, then there are additional regulators installed for these purposes. In order to understand how to check the IGBT transistor IRG4BC10K, you need to be familiar with the device of a multimeter.
IRG4BC8K Series Transistor Parameters
The IRG4BC8K series is the new IGBT transistor. The principle of their work is based on the change of passage. In this case, the parameter of the limiting frequency of the instrument will depend on the speed of the conversion process. The base in this model has a thickness of 1.3 mm. In this regard, the device is able to withstand the rated voltage at the input at 4 V.
Additionally, it should be noted that the presented model is not suitable for amplifiers. This is due largely to the low rate of transitions. However, the advantage of this model can be called a low threshold of resistance. In this regard, in the power controllers, this device is able to work quite successfully. Some experts also install it in various electric drives.
Using IRG4BC17K models
The use of IGBT transistors IRG4BC17K is very wide. This model of conductors has only two. The base thickness in this case is 1.2 mm.The parameter of the limiting frequency of the device on average does not exceed 5 Hz. Due to this, the negative resistance of the system is maintained quite large. The emitter in this case has a high conductivity.
IGBT control transistor through a phase change in the circuit. This model is used specifically most often in power controllers. Additionally, many experts install these transistors as conductors in an uninterruptible power supply.
Features of the model IRG4BC15K
The specified IGBT transistor is characterized by the presence of a buffer layer in the emitter. Throughput reaches 4 microns. To adjust the transitions used substrate. The devices of this type cannot work with beam capacitors. Additionally, it should be noted that in the converters these models are installed quite rarely. This is largely due to the fact that the accuracy of tracking devices is very low. However, some specialists install binary buses at the beginning of the circuit to solve this problem.
In order for IGBT transistors to work correctly, checking them with a multimeter should be carried out as often as possible.With regulators IRG4BC15K are used quite often. In this case, special attention should be paid to the induction parameter, as well as the threshold voltage. If it exceeds 40 V at the input, then the process of demagnetization of the emitter will occur fairly quickly. IRG4BC15K can be used at temperatures above 40 degrees. The operation of the IGBT transistor is based on a change in the limiting frequency. It can be adjusted in several ways.
In amplifiers, this is due to the rapid phase change. If we consider the uninterruptible power supply, then there much depends on the type of capacitors. When using analogue modifications, the change of the parameter of the limiting frequency is carried out by switching the substrate. In order to understand how to check the IGBT transistor IRG4BC15K, you need to be familiar with the device of a multimeter.
Scope of the transistor IRG4BC3K
This model is usually used in electric drives of various capacities. If we consider industrial modifications, then there they play the role of conductors. To increase the sensitivity of the device, many experts advise using a binary bus in the circuit.It should also be borne in mind that capacitors should be installed only of a closed type. All this is necessary so that the thermal losses in the circuit are minimal. As a result, the bandwidth of the emitter, which is located in the transistor, will be maximum.
In uninterruptible power supply devices IRG4BC3K installed quite rarely. This is primarily due to the high negative resistance in the circuit at 5 ohms. Also another problem in this situation is the slow conversion process. In order to understand how to check IGBT-transistor with a multimeter, you need to read the instructions for the device.
Installing the transistor in the drive
Install powerful IGBT transistors on the electric drive only near the binary bus. In this case, it is more expedient to select a model with a base of not more than 1.2 mm. All this is necessary to ensure that the device bandwidth does not eventually exceed 3 microns. Additionally, many experts advise to pay attention to the parameter of negative resistance in the circuit. On average, it ranges around 9 ohms.In order for the transitions in the device to occur correctly, the above parameter should not exceed 11 ohms.
It is better not to use beam capacitors in electric drives. In this regard, it will be more clever to install analogs of the closed type. Due to this, you can significantly reduce heat loss. The most common problems in this situation can be considered a blown collector in the transistor. This happens, as a rule, due to a sharp increase in the threshold voltage.
Additionally, the problem may lie in the wrong connection of the transistor to the circuit. Its output conductor must be connected to the anode without fail. The speed of the response should be at least 5 ms. Processing contours, in turn, may be different. In this situation, much depends on the bandwidth of the device.
Transistor in 5 V power supply
A transistor in a 5 V power supply can be installed without a binary bus. In this case, the limiting voltage at the input can be adjusted. In order to increase the sensitivity threshold of the device, many in the circuit additionally use beam capacitors.However, in such a situation, the threshold output voltage may increase. The principle of operation of the transistor in the power supply is to convert the current. In this case, the frequency limit parameter also changes. This happens through a change of transitions in the reservoir.
Transistors at 10 V units
In order for the power supply to function successfully, the transistor for it should be selected with a base of at least 1.1 mm. In this case, the transitions should be carried out with a response speed of 6 ms. With such parameters, one can hope for a good current conduction. Additionally, you should consider the maximum load on the device.
On average, this indicator fluctuates around 3 A. Due to a sharp increase in negative resistance in the circuit, IGBT power transistors can burn out. To prevent such situations, it is important to use a binary bus. Additionally, you should pay attention to the location of the capacitors on the chip. Some experts in this matter advise looking at the bandwidth parameter. If the capacitors in the power supply are in pairs, then the heat loss will be minimal.Feedback in this case occurs rather quickly if the transistor meets all the requirements of the unit.
Devices in a 15 V block
Transistors for a block of such power are only suitable with bases of at least 1.5 mm. In this case, the valves on them should be installed silicon type. Capacitors for blocks can be used different. Ultimately, it is important to monitor the threshold voltage parameter. It is also important to take into account the characteristics of capacitors. If the wear of their conductors is carried out fairly quickly, then the load on the transistor is large.
Transistors in dimmers
Transistors for regulators are necessary. First of all, they play the role of conductors. Additionally, they participate in the current conversion process. In this case, the polarity of the current is changed through the emitter adapters. Also note that the level of negative resistance is closely related to the sensitivity of the device.
In order to minimize the thermal loss of the transistor, it is necessary to use a binary bus in the controller. Also, many experts in this field advise beginners to use capacitors in a closed circuit only.
Transistors for Solar Inverters
Transistors for solar panel inverters must be selected on the basis of the differential resistance indicator. On average, this parameter ranges around 5 ohms. Additionally, experts advise to pay attention to the base device. If its thickness exceeds 1.3 mm, then quite sharp temperature drops can occur in the inverter.
This is due to the slow response of the signal. Additionally, it is important to remember about the sensitivity of the device. In order to increase this parameter, many install binary buses next to the transistors. Due to this, the parameter of the limiting voltage increases to 3 V. It is also important to consider the amplitude of the modulation, which affects the operation of the transistor.
Uninterruptible Power Supply Models
Most transistors for installation in uninterruptible power supply devices are suitable. It is necessary to pay attention only to the thickness of the base. In this case, it should not exceed 1.4 mm. Some experts advise to inspect the transistor for the presence of an additional conductor.To date, many manufacturers produce just such modifications.
This is due to the fact that their bandwidth increases significantly. However, the disadvantages include low signal response speed. It is also important to bear in mind that they have recently experienced certain problems associated with installing a binary bus nearby.
IRG4BC10K Transistor for Power Control
For power control, these transistors are ideal. The principle of operation of this model is to change the limit frequency in the device. This is done through a change of transition. It is important to note that the base thickness in this case is exactly 1.2 mm. Among other things, it is necessary to note the high throughput of the transistor at the level of 23 microns. All this was achieved by increasing the capacity of the collector. It is more expedient to install this element in the controller near the modulator.
You also need to calculate in advance the level of negative resistance. All this is necessary in order to minimize the risk of a sharp rise in temperature inside the system. Ultimately, this will lead to burnout of the collector in the transistor.Also, many experts in this situation do not consider it superfluous to take care of cleaning the conductors. All this is necessary in order to increase the speed of the signal. In this case, the sensitivity of the device will also increase.
IRG4BC13K Transistor for Power Control
IGBT transistor of this type is equipped with a special silicon gate. The capacity of the emitter in this case is more than 4 microns. In order to increase the sensitivity of the collector, many experts advise the use of binary tires. They are installed in the regulator immediately after the transistor. It is also important to consider the output power parameter of the device.
If it exceeds 40 V, then it is better not to use a binary bus in such a situation. Otherwise, the heat loss will be quite significant. Another problem with transistors in this series is the rapid overheating of the collector. This happens when the phase changes. This process is usually associated with a decrease in induction. In order to correct this situation, it is important to change the capacitors in the regulator. Some experts instead of the closed elements establish field analogs.
Model IRG4BC19K for power control
This IGBT transistor is quite common in power controllers today. This fact is primarily due to its large bandwidth. It should also be noted that the shutter in it is standardly used silicon. The parameter of negative resistance when using this transistor should not exceed 5 ohms. Otherwise, the user will experience overheating of the collector.
Also in parallel, the base of the device may suffer. To correct such damage in the transistor will then be impossible. In order to minimize the risks in the regulator, it is better to install closed-type capacitors. Due to their increased sensitivity, they are able to significantly accelerate the process of signal transmission. In this case, the current transmission width depends on the modulator used in the power regulator.